power transistors 1 publication date: january 2003 sjd00195ced 2SD1445A silicon npn epitaxial planar type for power amplification, power switching and low-voltage switching complementary to 2sb0948a features ? low collector-emitter saturation voltage v ce(sat) ? high-speed switching ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw. absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 0 40 v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 050 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 050 a forward current transfer ratio h fe1 v ce = 2 v, i c = 0.1 a 45 ? h fe2 * v ce = 2 v, i c = 3 a 60 260 collector-emitter saturation voltage v ce(sat) i c = 10 a, i b = 0.33 a 0.6 v base-emitter saturation voltage v be(sat) i c = 10 a, i b = 0.33 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 120 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 200 pf (common base, input open circuited) turn-on time t on i c = 3 a, i b1 = 0.1 a, i b2 = ? 0.1 a, 0.3 s storage time t stg v cc = 20 v 0.4 s fall time t f 0.1 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 40 v emitter-base voltage (collector open) v ebo 5v collector current i c 10 a peak collector current i cp 20 a collector power p c 40 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r q p h fe2 60 to 120 90 to 180 130 to 260 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package
2SD1445A 2 sjd00195ced v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c t on , t stg , t f ? i c safe operation area 0 0 160 40 120 80 20 60 40 80 (1) (2) (3) ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink (p c = 2.0 w) t c = 25 c i b = 100 ma 90 ma 80 ma 70 ma 60 ma 50 ma 40 ma 30 ma 20 ma 10 ma collector current i c (a) collector-emitter voltage v ce (v) 01234 6 5 0 2 4 6 8 10 0.1 1 10 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 10 1 0.1 i c / i b = 20 t c = 100 c 25 c ? 25 c 0.1 1 10 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 10 1 0.1 i c / i b = 20 t c = 100 c 25 c ? 25 c 0.1 1 10 1 1 000 100 10 v ce = 10 v t c = 100 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 0.01 10 0.1 1 0.1 v ce = 10 v f = 10 mhz t c = 25 c transition frequency f t ( mhz ) collector current i c ( a ) 1 10 100 1 000 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c ( a ) 0.01 0.1 1 10 100 05 4 3 2 1 pulsed t w = 1 ms duty cycle = 1% i c / i b = 30 (i b1 = ? i b2 ) v cc = 20 v t c = 25 c t stg t f t on 1 10 100 1 000 0.01 0.1 1 10 100 non repetitive pulse t c = 25 c t = 10 ms t = 1 s i cp dc i c collector current i c ( a ) collector-emitter voltage v ce ( v )
2SD1445A 3 sjd00195ced r th ? t 10 ? 2 10 ? 1 1 10 10 3 10 2 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 (1) (2) (1)without heat sink (2)with a 100 100 2 mm al heat sink time t (s) thermal resistance r th ( c/w)
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